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1 November 1991 Charge characteristics of thin rapid-thermal-nitrided SiOxNy film in MIS structure
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Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47287
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China
Abstract
This paper studies the charge characteristics and the interface trapping of new-type thin rapid thermal nitrided SiOxNy film (RTNF) and thin reoxidized nitrided SiOxNy film by the photo I-V method and the avalanche hot-electron injection technique. The research results give the bulk charge density and its distribution centroid position of thin RTNF and thin conventional SiO2 film. The reoxidation processing after rapid thermal nitridation reduced effectively the densities of bulk electron trapping and interface state in the RTNF. A physical model explanation of weakly-present 'N' form change for flatband voltage shift with avalanche injection dose also was presented. The change relationship of energy distribution for interface state density with injection dose was obtained. The theoretical analyses and discussions of these research results are included in this paper.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. Sheng Chen and Jing Yang "Charge characteristics of thin rapid-thermal-nitrided SiOxNy film in MIS structure", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); https://doi.org/10.1117/12.47287
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