1 November 1991 Condensation mechanisms and properties of rf-sputtered a-Si:H
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Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47181
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China
Abstract
The article is devoted to the influence of the technological parameters on the electrical and optical properties of a-Si:H analysis on the basis of a recently developed approach. It is shown that the region of critical values of deposition parameters Ts and Ph exists. In the vicinity of this region the alteration condensation mechanism of different SiHm (m equals 0,1,2,3) complexes is observed. The critical values separate the preparation conditions of two different types of a-Si:H material and correspond to non-equilibrium 'phase-transition.' The origin of 'pseudo doping effect' is discussed.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Valerie A. Ligachov, Valerie A. Ligachov, V. A. Filikov, V. A. Filikov, V. N. Gordeev, V. N. Gordeev, } "Condensation mechanisms and properties of rf-sputtered a-Si:H", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47181; https://doi.org/10.1117/12.47181
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