1 November 1991 Crystallization of hydrogenated amorphous silicon film and its fractal structure
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Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47264
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China
Abstract
Morphology of fractal structure in hydrogenated amorphous silicon (a-Si:H) films at different annealing temperatures is observed using transmission electron microscope (TEM). The experimental method is an in situ dynamic observation technique. The fractal dimensions are calculated with the Sandbox method. With the annealing temperature at 450 degree(s)C, the fingering-like fractal structures are grown in the films and the fractal dimension is 1.69. At 800 degree(s)C, the fractal dimension is 1.76. The experimental results show the fractal structures in a-Si:H films. The relationship between the fractal structures in a-Si:H films and its crystallization are discussed.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hongyi Lin, Hongyi Lin, Daoming Yang, Daoming Yang, Ying Xue Li, Ying Xue Li, } "Crystallization of hydrogenated amorphous silicon film and its fractal structure", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47264; https://doi.org/10.1117/12.47264
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