1 November 1991 Defects in SIPOS film studied by ESR
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Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47336
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China
Abstract
In the present paper, we used the data of g-factor value, linewidth Hpp, and spin density Ns from ESR measurement to investigate the defects in SIPOS film. There are four defects related to the different Si tetrahedral structures Si - (Si4 - YOY) in SIPOS film. These defects are named defect 1, defect 2, defect 3, and defect 4. The ESR spectrum found for a specific oxygen content is assumed to be a linear superposition of the resonance of these four defects. The g-value is the statistical average of four g-values' corresponding defects. Using the above model of defects, the variations of linewidth and spin densities of SIPOS film with different oxygen content and annealing conditions can be well described.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yun Zhen Wang, Yun Zhen Wang, Yao Ling Pan, Yao Ling Pan, } "Defects in SIPOS film studied by ESR", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47336; https://doi.org/10.1117/12.47336
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