Determination of thickness and refractal index of HgCdMnTe/CdMnTe VPE films by IR transmission spectrum

Wei Min Chen; Ke Jun Ma; Zhen Zhong Yu; Hua Mei Ji

doi:10.1117/12.47323

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1 November 1991 Determination of thickness and refractal index of HgCdMnTe/CdMnTe VPE films by IR transmission spectrum

Wei Min Chen, Ke Jun Ma, Zhen Zhong Yu, Hua Mei Ji

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Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47323
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China

Abstract

The thickness and refractal index of the diluted magnetic semiconductor (DME) Hg_1-x-yCd_xMn_yTe thin films grown on Cd_1-zMn_zTe substrate by close-spaced isothermal vapor phase epitaxy (ISOVPE) technique had been determined by the method of fitting the theoretical infrared transmission spectrum to the experimental data. The range of the film thickness was 5 - 30 micrometers and the indexes were around 3.5, depending upon the compositions. The index of Cd_1-xMn_zTe was also obtained by the combination of mechanical thinning and optical measurements, which changes from 2.71 (z equals 0.1) to 2.88 (z equals 0.6), and compared with those of related II-VI materials, CdTe and HgCdTe. The method was verified by scanning electron microscope data. It is non-destructive, simple, and effective, and can be routinely used in thin film material characterization.

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Wei Min Chen, Ke Jun Ma, Zhen Zhong Yu, and Hua Mei Ji "Determination of thickness and refractal index of HgCdMnTe/CdMnTe VPE films by IR transmission spectrum", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); https://doi.org/10.1117/12.47323

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