1 November 1991 Determination of thickness and refractal index of HgCdMnTe/CdMnTe VPE films by IR transmission spectrum
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Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47323
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China
Abstract
The thickness and refractal index of the diluted magnetic semiconductor (DME) Hg1-x-yCdxMnyTe thin films grown on Cd1-zMnzTe substrate by close-spaced isothermal vapor phase epitaxy (ISOVPE) technique had been determined by the method of fitting the theoretical infrared transmission spectrum to the experimental data. The range of the film thickness was 5 - 30 micrometers and the indexes were around 3.5, depending upon the compositions. The index of Cd1-xMnzTe was also obtained by the combination of mechanical thinning and optical measurements, which changes from 2.71 (z equals 0.1) to 2.88 (z equals 0.6), and compared with those of related II-VI materials, CdTe and HgCdTe. The method was verified by scanning electron microscope data. It is non-destructive, simple, and effective, and can be routinely used in thin film material characterization.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wei Min Chen, Wei Min Chen, Ke Jun Ma, Ke Jun Ma, Zhen Zhong Yu, Zhen Zhong Yu, Hua Mei Ji, Hua Mei Ji, } "Determination of thickness and refractal index of HgCdMnTe/CdMnTe VPE films by IR transmission spectrum", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47323; https://doi.org/10.1117/12.47323
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