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1 November 1991 Effect of parameter variation on the performance of InGaAsP/InP multiple-quantum-well electroabsorption/electrorefraction modulators
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Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47200
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China
Abstract
The dependence of electroabsorption and electrorefraction in InGaAs/InP multiple-quantum- well (MQW) structures on the MQW parameter (as P mole fraction y, well thickness Lz, residual impurity concentration Ndj in i region, and interface quality) and on the applied electric field is investigated theoretically. The relationship between the performance of a MQW long-wavelength phase modulator and electro-refraction is also investigated. Our theoretical study shows that the In1-xGaxAsyP1-y/InP MQW structure with y equals 0.9, Lz equals 100 angstrom is appropriate for a intensity modulator and the structure with y equals 0.87, Lz equals 140 angstrom is suitable for a phase modulator. High interface quality and low i region residual impurity concentration are in favor of the fast and efficient MQW modulators.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Feike Xiong, Long D. Zhu, and C. M. Wang "Effect of parameter variation on the performance of InGaAsP/InP multiple-quantum-well electroabsorption/electrorefraction modulators", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); https://doi.org/10.1117/12.47200
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