Electrical resistance-strain characteristics and structure of amorphous Ni-Si-B thin films

Xian-an Cheng; Qi Hua Gu; Bing-yu Chen

doi:10.1117/12.47225

1 November 1991 Electrical resistance-strain characteristics and structure of amorphous Ni-Si-B thin films

Xian-an Cheng, Qi Hua Gu, Bing-yu Chen

Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47225
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China

Abstract

The strain coefficient y and temperature coefficient of electrical resistance (TCR) and resistance stability of amorphous alloy Ni-Si-B films have been measured. These characteristics are related to the thickness of the film. The structure of the films have been examined by electron microscope. The results are discussed on the basis of microscopic columnar structure model of amorphous thin film and the Meiksin's Theory for effect of elastic strain on the electrical resistance of thin metal film.

Citation Download Citation

Xian-an Cheng, Qi Hua Gu, and Bing-yu Chen "Electrical resistance-strain characteristics and structure of amorphous Ni-Si-B thin films", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); https://doi.org/10.1117/12.47225

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