1 November 1991 Formation of boron nitride and silicon nitride bilayer films by ion-beam-enhanced deposition
Author Affiliations +
Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47242
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China
Abstract
Bilayer thin films of boron nitride and silicon nitride were prepared by sequential electron beam evaporation of Si or B and simultaneous irradiation with nitrogen ions. The composition and structure of the films were investigated by AES and IR analysis.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yi Ping Feng, Yi Ping Feng, Bing Yao Jiang, Bing Yao Jiang, Gen Qing Yang, Gen Qing Yang, Wei-Shi Huang, Wei-Shi Huang, Zhi Hong Zheng, Zhi Hong Zheng, Xiang Huai Liu, Xiang Huai Liu, Shichang Zou, Shichang Zou, } "Formation of boron nitride and silicon nitride bilayer films by ion-beam-enhanced deposition", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47242; https://doi.org/10.1117/12.47242
PROCEEDINGS
4 PAGES


SHARE
Back to Top