Growth of PbTiO3 films by photo-MOCVD

Masaru Shimizu; Takuma Katayama; Masashi Fujimoto; Tadashi Shiosaki

doi:10.1117/12.47305

1 November 1991 Growth of PbTiO₃ films by photo-MOCVD

Masaru Shimizu, Takuma Katayama, Masashi Fujimoto, Tadashi Shiosaki

Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47305
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China

Abstract

PbTiO₃ films having a perovskite structure have been successfully grown on sapphire, MgO, and Si substrates by the photo-MOCVD technique using tetraethyl lead, titanium tetraisopropoxide, oxygen, and nitrogen dioxide. When O₂ was used as an oxidizing gas, polycrystalline perovskite PbTiO₃ films were grown at substrate temperatures higher than 600 degree(s)C. UV light irradiation affected the growth rate and crystalline structure. Only when films were grown using the photo-MOCVD method, highly (111) oriented PbTiO₃ films were obtained on (0001) sapphire at 600 degree(s)C. When NO₂ was used, perovskite PbTiO₃ films were grown at a substrate temperature of 530 degree(s)C using the photo- MOCVD method. The use of NO₂ in the photo-MOCVD process significantly reduced growth temperature due to its wide absorption wavelength. The electrical properties of films were also measured. The step coverage of films obtained using the photo-MOCVD method was fairly good.

Citation Download Citation

Masaru Shimizu, Takuma Katayama, Masashi Fujimoto, and Tadashi Shiosaki "Growth of PbTiO₃ films by photo-MOCVD", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); https://doi.org/10.1117/12.47305

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