1 November 1991 Growth of PbTiO3 films by photo-MOCVD
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Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47305
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China
Abstract
PbTiO3 films having a perovskite structure have been successfully grown on sapphire, MgO, and Si substrates by the photo-MOCVD technique using tetraethyl lead, titanium tetraisopropoxide, oxygen, and nitrogen dioxide. When O2 was used as an oxidizing gas, polycrystalline perovskite PbTiO3 films were grown at substrate temperatures higher than 600 degree(s)C. UV light irradiation affected the growth rate and crystalline structure. Only when films were grown using the photo-MOCVD method, highly (111) oriented PbTiO3 films were obtained on (0001) sapphire at 600 degree(s)C. When NO2 was used, perovskite PbTiO3 films were grown at a substrate temperature of 530 degree(s)C using the photo- MOCVD method. The use of NO2 in the photo-MOCVD process significantly reduced growth temperature due to its wide absorption wavelength. The electrical properties of films were also measured. The step coverage of films obtained using the photo-MOCVD method was fairly good.
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Masaru Shimizu, Takuma Katayama, Masashi Fujimoto, Tadashi Shiosaki, "Growth of PbTiO3 films by photo-MOCVD", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47305; https://doi.org/10.1117/12.47305
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