1 November 1991 Growth of ZnSe-ZnTe strained-layer supperlattices by atmospheric pressure MOCVD on transparent substrate CaF2 (111)
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Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47204
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China
Abstract
ZnSe-ZnTe strained-layer superlattices were grown by atmospheric pressure MOCVD on transparent substrate CaF2(111) for the first time. With x-ray diffraction measurements, multi- order satellites were observed, which confirms the formation of the period structure of superlattices. Photoluminescence measurements were carried out at 77 K with the excitation of the line (337. 1nm) of N2-laser. Optical absorption measurements were performed at room temperature with UV-3000 Double-Wavelength/Dual Beam Recording Spectrosphotometer.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chuan Kang Pan, F. Y. Jiang, Guang Han Fan, Y. Z. Ma, Xiwu Fan, "Growth of ZnSe-ZnTe strained-layer supperlattices by atmospheric pressure MOCVD on transparent substrate CaF2 (111)", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47204; https://doi.org/10.1117/12.47204
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