1 November 1991 High-quality heavily strained II-VI quantum well
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Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47198
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China
Abstract
Atomic layer epitaxy technique was successfully applied to grow CdTe-ZnTe multilayers on (001) GaAs substrate. A structure of (CdTe)m(ZnTe)n-ZnTe multiquantum wells was proposed and prepared, and characterized by x-ray diffraction, photoluminescence, and modulation reflection spectroscope. The high crystalline quality is mainly due to the reduction of misfit dislocations.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jie Li, Li He, Weiming Tang, W. Shan, Shixin Yuan, "High-quality heavily strained II-VI quantum well", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47198; https://doi.org/10.1117/12.47198
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