1 November 1991 High-quality heavily strained II-VI quantum well
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Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47198
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China
Abstract
Atomic layer epitaxy technique was successfully applied to grow CdTe-ZnTe multilayers on (001) GaAs substrate. A structure of (CdTe)m(ZnTe)n-ZnTe multiquantum wells was proposed and prepared, and characterized by x-ray diffraction, photoluminescence, and modulation reflection spectroscope. The high crystalline quality is mainly due to the reduction of misfit dislocations.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jie Li, Jie Li, Li He, Li He, Weiming Tang, Weiming Tang, W. Shan, W. Shan, Shixin Yuan, Shixin Yuan, } "High-quality heavily strained II-VI quantum well", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47198; https://doi.org/10.1117/12.47198
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