1 November 1991 In-situ low-temperature and epitaxial growth of high-Tc superconducting films using oxygen-discharge-assisted laser ablation method
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Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47238
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China
Abstract
High Tc superconducting films with zero resistance temperature of 91 K and critical current density about 105 A/cm2 at 77 K have been reproductively fabricated using oxygen discharge plasma-assisted excimer laser ablation method. Scanning electron micrographs and x-ray diffraction patterns of the films showed that these kinds of in situ prepared films had excellent epitaxial quality with its C axis oriented perpendicular to the substrate surface.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yongchang Fan, Chengwu An, Dongsheng Lu, Zaiguang Li, "In-situ low-temperature and epitaxial growth of high-Tc superconducting films using oxygen-discharge-assisted laser ablation method", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47238; https://doi.org/10.1117/12.47238
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