1 November 1991 Incorporation of As into HgCdTe grown by MOCVD
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Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991); doi: 10.1117/12.47327
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China
Abstract
This is the first report on the mechanism of As incorporation into MOCVD-grown HgCdTe/CdTe/GaAs films. HgCdTe/CdTe/GaAs wafers have been grown by metalorganic chemical vapor deposition (MOCVD). The atomic absorption spectrometer was utilized to analyze As content in the As-grown HgCdTe epilayers. The integrated GC-MS analytical system was utilized to observe the decomposition products of DMCd and/or DETe at different temperatures in the presence of GaAs. The mechanism of As incorporation into epilayers is presented.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jin He, Zhen Zhong Yu, Ke Jun Ma, Pei Min Jia, Jianrong Yang, Shou Zhen Shen, Wei Min Chen, Jimin Yang, "Incorporation of As into HgCdTe grown by MOCVD", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47327; https://doi.org/10.1117/12.47327
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KEYWORDS
Gallium arsenide

Mercury cadmium telluride

Metalorganic chemical vapor deposition

Physics

Arsenic

Thin films

Mercury

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