Paper
1 November 1991 Investigation of defects in HgCdTe epi-films grown from Te solutions
Yue Wang, Zhi Jie Tang, Wei Sha Zhuang, Jing Fu He
Author Affiliations +
Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47233
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China
Abstract
The defects on MCT epi-films grown from Te Solutions using liquid phase epitaxy method have been investigated by Metaloscope, x-ray diffraction meter, and electronic scanning microscopes. The observation results show that the defects in MCT epi-films, such as dislocation, twin, sub-grain, and boundary, have damaged the crystal-film's lattice structure and led to poor crystal perfection; the stress existed in the film has caused the lattice to deform and further widened the double crystal rocking curve of the film. It has been found that these defects in the MCT films are almost corresponding to that of CdTe substrates; LPE growth procedure and condition can also affect the quality of MCT films.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yue Wang, Zhi Jie Tang, Wei Sha Zhuang, and Jing Fu He "Investigation of defects in HgCdTe epi-films grown from Te solutions", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); https://doi.org/10.1117/12.47233
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Cited by 2 scholarly publications.
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KEYWORDS
Crystals

Mercury cadmium telluride

Thin films

X-ray diffraction

Liquid phase epitaxy

Physics

Tellurium

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