1 November 1991 Ion implantation of diamond-like carbon films
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Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47193
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China
Abstract
Diamond-like carbon (DLC) films (a-C:H) were implanted by 140 keV and 110 keV Ar ion beams. The characteristics of the implanted films decreased dramatically under a dose of 2 X 1016 Ar/cm2. IR spectra and optical gap Epot were measured. It was found that the SP2 and SP3 components decreased due to the loss of hydrogen during implantation, and the ratio of components SP2 bonds to SP3 bonds increased with the ion dose. And the optical gap Epot decreased from 1.46 eV to 0.83 eV. The hydrogen (bonded and unbonded) contents in the films were measured with the nuclear resonant reaction 1H (19F,) 16O. It is shown that hydrogen plays an important role in affecting some properties of DLC films.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jin Zhong Xiang, Jin Zhong Xiang, Zhi Hao Zheng, Zhi Hao Zheng, Changgeng Liao, Changgeng Liao, Jing Xiong, Jing Xiong, Yong Qiang Wang, Yong Qiang Wang, Fang-Qing Zhang, Fang-Qing Zhang, } "Ion implantation of diamond-like carbon films", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47193; https://doi.org/10.1117/12.47193
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