1 November 1991 Laser-induced phase transition in crystal InSb films as used in optical storage
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Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47269
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China
Abstract
We have analyzed the transient phase transition process in c-InSb films by the measurement of temporal reflectivity change. The results show that InSb film is a promising medium for optical storage, and the reflectivity change measurement is a useful method to explore the dynamic processes in thin films and the material's surfaces under pulsed laser irradiation.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yang Sun, Yang Sun, Cheng Fu Li, Cheng Fu Li, He Deng, He Deng, Fuxi Gan, Fuxi Gan, } "Laser-induced phase transition in crystal InSb films as used in optical storage", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47269; https://doi.org/10.1117/12.47269
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