1 November 1991 Laser-induced phase transition in crystal InSb films as used in optical storage
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Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47269
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China
Abstract
We have analyzed the transient phase transition process in c-InSb films by the measurement of temporal reflectivity change. The results show that InSb film is a promising medium for optical storage, and the reflectivity change measurement is a useful method to explore the dynamic processes in thin films and the material's surfaces under pulsed laser irradiation.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yang Sun, Cheng Fu Li, He Deng, Fuxi Gan, "Laser-induced phase transition in crystal InSb films as used in optical storage", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47269; https://doi.org/10.1117/12.47269
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