Paper
1 November 1991 Molecular beam epitaxial growth of ZnSe-ZnS strained-layer superlattices
Ai Dong Shen, Jie Cui, Hai Long Wang, ZhiJiang Wang
Author Affiliations +
Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47222
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China
Abstract
High quality ZnSe-ZnS strained-layer superlattices (ELSs) were grown by molecular beam epitaxy (MBE). Photoluminescence and Raman-scattering measurements were carried out to evaluate the optical properties of the SLSs.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ai Dong Shen, Jie Cui, Hai Long Wang, and ZhiJiang Wang "Molecular beam epitaxial growth of ZnSe-ZnS strained-layer superlattices", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); https://doi.org/10.1117/12.47222
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KEYWORDS
Zinc

Laser sintering

Superlattices

Molecular beam epitaxy

Molecular beams

Optical properties

Physics

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