1 November 1991 Molecular beam epitaxial growth of ZnSe-ZnS strained-layer superlattices
Author Affiliations +
Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47222
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China
Abstract
High quality ZnSe-ZnS strained-layer superlattices (ELSs) were grown by molecular beam epitaxy (MBE). Photoluminescence and Raman-scattering measurements were carried out to evaluate the optical properties of the SLSs.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ai Dong Shen, Ai Dong Shen, Jie Cui, Jie Cui, Hai Long Wang, Hai Long Wang, ZhiJiang Wang, ZhiJiang Wang, } "Molecular beam epitaxial growth of ZnSe-ZnS strained-layer superlattices", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47222; https://doi.org/10.1117/12.47222
PROCEEDINGS
4 PAGES


SHARE
Back to Top