Optical and electrical properties of Al-Al2O3-Cu tunnel junctions

Q. Q. Shu; X. M. Tian; X. Y. Chen; C. Z. Cai; K. Q. Zheng; W. G. Ma

doi:10.1117/12.47226

1 November 1991 Optical and electrical properties of Al-Al₂O₃-Cu tunnel junctions

Q. Q. Shu, X. M. Tian, X. Y. Chen, C. Z. Cai, K. Q. Zheng, W. G. Ma

Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47226
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China

Abstract

Compared with Al-Al₂O₃-Au tunnel junctions, light emission output and I-V characteristics of Al-Al₂O₃-Cu tunnel junctions have been studied. The junctions with Cu films of 500 angstrom can be biased up to 2.9 eV at room temperature, and the light emission efficiencies were in the 10^-6 range. The I-V curves have been measured at 77 K. Based on the dispersion curves of surface plasmon polariton at the interfaces and the barrier parameters of the junctions, a discussion of the results is given.

Citation Download Citation

Q. Q. Shu, X. M. Tian, X. Y. Chen, C. Z. Cai, K. Q. Zheng, and W. G. Ma "Optical and electrical properties of Al-Al₂O₃-Cu tunnel junctions", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); https://doi.org/10.1117/12.47226

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