1 November 1991 Optical characterization of Hg1-xCdxTe/CdTe/GaAs multilayers grown by molecular beam epitaxy
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Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47322
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China
Abstract
The IR transmission spectra for HgCdTe/CdTe/GaAs multilayers grown by molecular-beam epitaxy were measured in the wavenumber region of 600 cm-1 - 4000 cm-1 at 300 K and 77 K. The transmission spectra were calculated taking the thickness d1 of MCT layer and the thickness d2 of CdTe layer as fitting parameters in the energy range from 600 cm-1 to 300 cm-1 below the energy gap Eg assuming the existence of abrupt interfaces between the neighboring layers. The values of d1 and d2 obtained by fitting the IR transmission spectra are in good agreement with that by transmission electron microscopy (TEM) measurement. The accurate absorption coefficient spectra were obtained and discussed in the energy region equivalent to 0.9 Eg to 4000 cm-1 taking into account the interference effects.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Weijun Liu, Weijun Liu, Pulin Liu, Pulin Liu, Guo Liang Shi, Guo Liang Shi, Jing-Bing Zhu, Jing-Bing Zhu, Li He, Li He, Qin Xi Xie, Qin Xi Xie, Shixin Yuan, Shixin Yuan, } "Optical characterization of Hg1-xCdxTe/CdTe/GaAs multilayers grown by molecular beam epitaxy", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47322; https://doi.org/10.1117/12.47322
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