Photosensitivity of selenium-bismuth films with varigap structure

Anatolyi I. Popov; N. Mikhalev; A. Karalyunts; O. Smirnov; N. Vasilyeva

doi:10.1117/12.47180

1 November 1991 Photosensitivity of selenium-bismuth films with varigap structure

Anatolyi I. Popov, N. Mikhalev, A. Karalyunts, O. Smirnov, N. Vasilyeva

Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47180
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China

Abstract

The results of creating and investigating the electrophotographic layers on the basis of selenium-bismuth system with variable bismuth concentration along the thickness of the film are given. The samples for the investigations were obtained by means of thermal coevaporation of components on the oxidized aluminum substrate. Investigation of molecular and electron structure and those of electrophotographic properties of varigap films on the basis of Se-Bi showed the possibility of effective control of both spectral dependence and of absolute values of electrophotographic sensitivity of the films.

Citation Download Citation

Anatolyi I. Popov, N. Mikhalev, A. Karalyunts, O. Smirnov, and N. Vasilyeva "Photosensitivity of selenium-bismuth films with varigap structure", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); https://doi.org/10.1117/12.47180

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