1 November 1991 Photosensitivity of selenium-bismuth films with varigap structure
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Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47180
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China
Abstract
The results of creating and investigating the electrophotographic layers on the basis of selenium-bismuth system with variable bismuth concentration along the thickness of the film are given. The samples for the investigations were obtained by means of thermal coevaporation of components on the oxidized aluminum substrate. Investigation of molecular and electron structure and those of electrophotographic properties of varigap films on the basis of Se-Bi showed the possibility of effective control of both spectral dependence and of absolute values of electrophotographic sensitivity of the films.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Anatolyi I. Popov, Anatolyi I. Popov, N. Mikhalev, N. Mikhalev, A. Karalyunts, A. Karalyunts, O. Smirnov, O. Smirnov, N. Vasilyeva, N. Vasilyeva, } "Photosensitivity of selenium-bismuth films with varigap structure", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47180; https://doi.org/10.1117/12.47180
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