1 November 1991 Research on relaxation process of a-Si:H film photoconductivity and the trap effect
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Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47253
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China
Abstract
By using monochromatic light from the monochromator and super-resistance measurement instrument and function recorder, we measured the relaxation phenomena of the a-Si:H film photoconductivity and obtained some regularities. We propose that the relaxation time ((tau) ) according to exponential changes is mainly affected by minority carrier traps and the effect of majority carrier traps makes the photoconductivity relaxation process deviate from the exponential curve and greatly delays the actual relaxation time. We have not found so far any paper dealing with the different effects of these two types of traps.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dao Ben Gong, "Research on relaxation process of a-Si:H film photoconductivity and the trap effect", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47253; https://doi.org/10.1117/12.47253
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