1 November 1991 Structural investigations of the (Si1-x,Gex)O2 single-crystal thin films by x-ray photoelectron spectroscopy
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Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47304
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China
Abstract
The electron structure of the SiO2-GeO2 single crystal thin films has been investigated by x-ray photoelectron spectroscopy (XPS). The growth of the high-germanium a-quartz was performed under hydrothermal conditions, applying a technique that involves high-alkaline solutions. The quartz crystals with germanium oxide content up to 14 mol% have been obtained for the first time. The XPS experiments were carried out using a photoelectron spectrometer (ES-2401). The XPS data show evidence for high separation of the [SiO4]n and [GeO4]n clusters, because the charged parameters for these atoms are not subjected to mutual excitation to remain close to initial SiO2 and GeO2.
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Svetlana Sorokina, Svetlana Sorokina, Juriy Dikov, Juriy Dikov, } "Structural investigations of the (Si1-x,Gex)O2 single-crystal thin films by x-ray photoelectron spectroscopy", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47304; https://doi.org/10.1117/12.47304
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