1 November 1991 Study of HgCdTe/CdTe interface structure grown by metal-organic chemical vapor deposition
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Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991); doi: 10.1117/12.47318
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China
Abstract
The interface of HgCdTe/CdTe thin film growth by MOCVD were investigated by high resolution electron microscope (HREM). It is shown that there is no monolayer abrupt interface between HgCdTe and CdTe films. The interface of HgCdTe/CdTe contains a lot of small and random distributed disorder regions. The disorder areas can be transformed into order one under long time electron beam irradiation.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ke Jun Ma, Zhen Zhong Yu, Jian Rong Yanh, Shou Zhen Shen, Jin He, Wei Min Chen, Xiangyun Song, "Study of HgCdTe/CdTe interface structure grown by metal-organic chemical vapor deposition", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47318; https://doi.org/10.1117/12.47318
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KEYWORDS
Interfaces

Crystals

Mercury cadmium telluride

Chemical species

Thin films

Physics

Annealing

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