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1 November 1991 Study of p-ZnTe/n-CdTe thin film heterojunction
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Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47335
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China
Abstract
From band theory, this paper analyzes the junction region structure of p-ZnTe/n-CdTe heterojunction and offers the energy band figure. In the junction region, the bottom of the conduction band is noncontinuous and the top of the vanlence band has a convex peak in p- region and a concave peak in n-region. This thesis also analyzes the conduction of the heterojunction by the diffusion model. With thermal balance, the barrier for the pyieldsn holes in the vanlence band is lower than that for the nyieldsp electrons in the conduction band. So, the holes conduction is main and the electronic conduction can be negligible. The experimental method and the technological process of the heterojunction are described. And the results are given.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ping Wu "Study of p-ZnTe/n-CdTe thin film heterojunction", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); https://doi.org/10.1117/12.47335
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