1 November 1991 Study of phase transition VO2 thin film
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Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47275
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China
Abstract
Vanadium dioxide thin film that has semiconductor-to-metal phase transition has been obtained by either reactive evaporation or reactive ion assisted deposition with subsequent annealing processes. Various kinds of measurement methods have been developed in investigation of phase transition properties of vanadium dioxide films. It is observed that the performance of phase transition properties strongly depends upon the stoichiometric and crystalline characteristics of the thin film.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jiancun Gao, Zhi Hong Lin, Liying Han, "Study of phase transition VO2 thin film", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47275; https://doi.org/10.1117/12.47275
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