1 November 1991 Study of the microstructures in Ar+ laser crystallized films of a-Si:H for active layer of thin film transistors
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Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47191
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China
Abstract
The structural and electrical properties of a-Si:H crystallized films obtained by the Ar+ laser scanning irradiation have been investigated by means of Raman scattering, X-ray diffraction, and conductivity-Hall measurement. For the liquid phase laser crystallized films (LP-LCR) the results show that the average grain size is about tens of micrometers and the preferential crystal orientation is in the direction of <111>. At room temperature the conductivity of crystallized films is 1.5 ((Omega) (DOT)cm)-1 and the Hall mobility of electrons is about 36 cm2/V(DOT)s.
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Xinfan Huang, Xinfan Huang, Xiang Dong Zhang, Xiang Dong Zhang, Wei Ying Zhu, Wei Ying Zhu, YingYing Chen, YingYing Chen, } "Study of the microstructures in Ar+ laser crystallized films of a-Si:H for active layer of thin film transistors", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47191; https://doi.org/10.1117/12.47191
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