1 November 1991 Study on the high-field current transport mechanisms in thin SiOxNy films
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Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991); doi: 10.1117/12.47257
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China
Abstract
A new model is proposed to explain the current transport behavior in thin thermally nitrided silicon oxide (SiOxNy) films. In this model it was suggested that there are four mechanisms for the current conduction, namely: a) direct electron injection from the cathode; b) current due to electron capturing of traps; c) re-emission of trapped electron; and d) the hole injection from the Si-substrate. The theoretical results of the new model, including the current enhancement and trapping ledge phenomena in the I-V characteristics of the insulators, agree well with the experiments. The influence of the external applied field and the electron traps on the current transport behaviors in the SiOxNy films were also discussed.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bing Liang Yang, Bai Yong Liu, D. N. Chen, Y. C. Cheng, HonLeung Kelvin Wong, "Study on the high-field current transport mechanisms in thin SiOxNy films", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47257; https://doi.org/10.1117/12.47257
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KEYWORDS
Thin films

Silicon

Dielectrics

Oxides

Silicon films

Electron transport

Physics

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