1 November 1991 Thin film SIMNI material formed by low-energy nitrogen implantation and epitaxial growth
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Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47197
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China
Abstract
N-type <100> Si wafers were implanted with 95 keV, (0.1-1) X 1018/cm2 N+2 and N+ by using ion implanter without mass analysis. After implantation the samples were annealed at 1200 degree(s)C for 2 hours and underwent vapor phase epitaxial growth. Some of the physical and electrical properties of the thin film SIMNI materials were studied by Rutherford backscattering and channeling, cross- sectional transmission electron microscopy, Auger electron spectrometry, infrared absorption and reflection, and spreading resistance measurements. All the results showed that thicknesses of top silicon layer with minimum channeling yield of 5% are 0.3 - 1.0 micrometers and the thicknesses of buried Si3N4 layer are 170 - 200 nm. The Si-Si3N4 interfaces are extremely abrupt. In order to obtain the good SIMNI material, the ion implantation dose is an important parameter, which has a great influence upon the quality of the top silicon layer.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chenglu Lin, Jinhua Li, Zou Shichang, "Thin film SIMNI material formed by low-energy nitrogen implantation and epitaxial growth", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47197; https://doi.org/10.1117/12.47197
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