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1 November 1991 ZnS:Mn thin film electroluminescent display devices using hafnium dioxide as insulating layer
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Proceedings Volume 1519, International Conference on Thin Film Physics and Applications; (1991) https://doi.org/10.1117/12.47283
Event: International Conference on Thin Film Physics and Applications, 1991, Shanghai, China
Abstract
The ac thin film EL possesses the properties of high resolution, compact, high brightness, and large area, etc. One of the important subjects is the choice of dielectric materials for use in ACTFEL displays. In this paper we discuss the electrical and optical performances of EL devices with BaTiO3, Ta2O5, Al2O3, and HfO2 as insulating layers. From the results, we find that EL devices with a glass/ITO/BaTiO3/ZnS:Mn/HfO2/Ta2O5/HfO2/Al structure are excellent in brightness and efficiency.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. T. Hsu, Jiin Wen Li, C. S. Liu, Yan-Kuin Su, Tong S. Wu, and Meiso Yokoyama "ZnS:Mn thin film electroluminescent display devices using hafnium dioxide as insulating layer", Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); https://doi.org/10.1117/12.47283
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