Paper
1 February 1992 Aging characteristics of CdSe thin films at low temperatures
P. J. Sebastian, V. Sivaramakrishnan
Author Affiliations +
Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.57004
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India
Abstract
The aging (increase in film resistance with time) of CdSe thin films in oxygen and air at various substrate temperatures are reported. The films aged at low temperatures attained saturation in film resistance faster than those aged at higher substrate temperatures. This may be explained by considering the difference in the oxygen chemisorption rates in various films.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. J. Sebastian and V. Sivaramakrishnan "Aging characteristics of CdSe thin films at low temperatures", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); https://doi.org/10.1117/12.57004
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KEYWORDS
Oxygen

Resistance

Thin films

Chemisorption

Electrons

Temperature metrology

Adsorption

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