1 February 1992 Angle-resolved XPS studies of thermal oxides on polycrystalline GaAs thin films
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Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.57034
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India
Abstract
Thermal oxides on polycrystalline GaAs thin films are grown at 10-04 Torr and 600 K. The oxide layers are studied by Angle Resolved X-ray Photoelectron Spectroscopy (ARXPS). The core level spectra of Ga and As are obtained at different takes of angles. The oxide content of the films was found to increase with a decrease in the take of angle. The As2O3 content was found to be less than that of Ga2O3.
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S. S.V. Avadhani, S. S.V. Avadhani, S. Kasi Viswanathan, S. Kasi Viswanathan, B. S. V. Gopalam, B. S. V. Gopalam, } "Angle-resolved XPS studies of thermal oxides on polycrystalline GaAs thin films", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.57034; https://doi.org/10.1117/12.57034
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