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1 February 1992 Characterization of SnSe films for device applications
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Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.56997
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India
Abstract
The structure and electronic and optical properties of SnSe films prepared by flash evaporation and hot wall epitaxy techniques onto different substrates have been presented. It has been observed that films deposited on glass and mica substrates are polycrystalline in nature, while the films grown on KCl substrates are found to be epitaxial. Grain size as large as 4 micrometers has been obtained for films prepared by the HWE technique. The electrical conductivity and carrier mobility of HWE grown SnSe film are comparatively higher than those obtained by conventional evaporation techniques. The absorption edge of SnSe films is due to an allowed direct transition of energy of about 1.22 eV. An attempt has been made to fabricate and characterize the FTO-SnSe heterojunction.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. K. Bedi "Characterization of SnSe films for device applications", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); https://doi.org/10.1117/12.56997
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