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1 February 1992 Characterization of hydrogenated amorphous silicon carbide films
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Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.57018
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India
Abstract
A-SiC:H films were prepared by magnetron sputtering of silicon in an atmosphere of argon, hydrogen and acetylene gas on c-Si and glass substrates maintained at a temperature of 250 degree(s)C. It was indicated from the FTIR spectroscopy that the vibrational modes of SiC- and SiHm-shifted to higher energies due to the incorporation of carbon in a-Si:H network. The decrease of dark and photo conductivity with the carbon content was attributed to the additional defects produced by alloying of carbon in the a-Si:H.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Uthanna "Characterization of hydrogenated amorphous silicon carbide films", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); https://doi.org/10.1117/12.57018
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