1 February 1992 Concentration dependence of diffusivity in polysilicon
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Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992); doi: 10.1117/12.57028
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India
Abstract
Diffusion of phosphorus in polycrystalline silicon is carried out from POC13 source at 1000 degree(s)C for 1 hour. The diffusion profiles were obtained and were analyzed to get diffusivity as a function of concentration.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. R. Murti, K. V. Reddy, "Concentration dependence of diffusivity in polysilicon", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.57028; https://doi.org/10.1117/12.57028
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KEYWORDS
Diffusion

Phosphorus

Silicon

Chemical analysis

Crystals

Materials processing

Microelectronics

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