1 February 1992 Diffusion Studies In Silicon
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Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.634081
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India
Abstract
The lecture is introduced by a survey ofselJdffusion ofSi, which gives access to the nature of the most probable point deftcts. The major results on the diffusion of the main electron donors and acceptors are then summarized. The metallic impurities which can play a crucial role in the Silicon technology are also consit'kred. Their extraordinary fast dffusivity is tentatively explained. On the other hand, dfusion methods are also proposed to remove those metals (gettering). The latest experimental and simulation results of diffusion ofhydrogen and oxygen arefinally reported.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Francois Beniere, Francois Beniere, } "Diffusion Studies In Silicon", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.634081; https://doi.org/10.1117/12.634081
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