Direct evidence for negative-U nature of DX center in AlxGa1-xAs

Subhasis Ghosh; Vikram Kumar

doi:10.1117/12.56992

1 February 1992 Direct evidence for negative-U nature of DX center in Al_xGa_1-xAs

Subhasis Ghosh, Vikram Kumar

Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.56992
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India

Abstract

Photo-deep-level transient spectroscopy detection of a new level with thermal activation energy 0.22 eV of DX centers in silicon doped Al_xGa_1-xAs (x equals 0.26) is reported for the first time. The observation of this level directly proves the negative-U properties of DX centers and the existence of metastable state DX degree(s) which is also confirmed by the transient photoconductivity experiment.

Citation Download Citation

Subhasis Ghosh and Vikram Kumar "Direct evidence for negative-U nature of DX center in Al_xGa_1-xAs", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); https://doi.org/10.1117/12.56992

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