1 February 1992 Effect of surface recombination and modulated frequency on the intrinsic parameters of an ion-implanted GaAs OPFET
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Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.57026
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India
Abstract
The effect of surface recombination and modulated frequency on the intrinsic parameters of an ion implanted GaAs optical field effect transistor have been analyzed. The study reveals that the gate-source capacitance increases with gate-source voltage, first slowly, and then sharply under normally OFF condition with the increase of modulated frequency. However, the surface recombination reduces these effects depending upon the trap center density. These variations are small in a normally ON device. Also, the drain-source resistance is found to increase with the increase of modulating frequency, but it reduces with the reduction of trap- center density at a fixed flux density and drain-source voltage.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vinaya Kumar Singh, S. R. Singh, B. B. Pal, "Effect of surface recombination and modulated frequency on the intrinsic parameters of an ion-implanted GaAs OPFET", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.57026; https://doi.org/10.1117/12.57026
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