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1 February 1992 Effect of ultrathin metal layers on the plasma anodization of GaAs
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Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.56988
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India
Abstract
The anodization of GaAs in RF plasma may be strongly affected by thin metal layers, evaporated on top of the semiconductor before oxidation. Thin (approximately equals 2 nm) Al films first cause a retention followed by a dramatic increase of the oxidation rate. The energy spectrum of the interface is altered and the lattice contraction below the oxide is reduced. The oxidation is exceptionally fast beneath a Sm film. Other metals (Au, Cr) of similar or even smaller thickness prevent the successful oxidation or result in oxide of poor quality.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sh. Lanyi, E. Pincik, and V. Nadazdy "Effect of ultrathin metal layers on the plasma anodization of GaAs", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); https://doi.org/10.1117/12.56988
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