1 February 1992 Electrical and optical properties of CuGa0.5In0.5Se2 thin films
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Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.57017
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India
Abstract
CuGa0.5In0.5Se2 thin films grown on Corning 7059 glass substrates at Tx equals 598 - 648 K in a vacuum better than 2 X 10-6 torr were nearly stoichiometric and polycrystalline. Thermoelectric power and Hall effect measurements indicated p-type conduction in the films. The temperature dependence of the electrical conductivity suggests that above 400 K the conduction mechanism is intrinsic, whereas extrinsic/impurity conduction dominates in the range 303 - 400 K. The optical absorption studies revealed a fundamental energy gap of 1.29 eV.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Y. Aparna, P. S. Reddy, B. Srinivasulu Naidu, "Electrical and optical properties of CuGa0.5In0.5Se2 thin films", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.57017; https://doi.org/10.1117/12.57017
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