1 February 1992 Electrical and optical properties of CuGa0.5In0.5Se2 thin films
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Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.57017
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India
Abstract
CuGa0.5In0.5Se2 thin films grown on Corning 7059 glass substrates at Tx equals 598 - 648 K in a vacuum better than 2 X 10-6 torr were nearly stoichiometric and polycrystalline. Thermoelectric power and Hall effect measurements indicated p-type conduction in the films. The temperature dependence of the electrical conductivity suggests that above 400 K the conduction mechanism is intrinsic, whereas extrinsic/impurity conduction dominates in the range 303 - 400 K. The optical absorption studies revealed a fundamental energy gap of 1.29 eV.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Y. Aparna, Y. Aparna, P. S. Reddy, P. S. Reddy, B. Srinivasulu Naidu, B. Srinivasulu Naidu, } "Electrical and optical properties of CuGa0.5In0.5Se2 thin films", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.57017; https://doi.org/10.1117/12.57017
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