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1 February 1992 Electrical and optical properties of pure and silver-doped zinc telluride films
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Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.57033
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India
Abstract
Thin films of pure and silver doped zinc telluride were deposited on well-cleaned Corning glass substrates maintained at temperatures in the range 303 - 598 K by the vacuum evaporation method. The electrical conductivity of the pure films decreased from 1.1 X 10-5 to 4.4 X 10-6 ohm-1 cm-1 with the deposition temperature. The activation energy in the high temperature region was 0.33 eV, while at low temperatures it was 0.06 eV above the valence band. In the Ag doped films, the conductivity increased one order of magnitude. The optical band gap reduced from 2.23 eV to 2.18 eV with the Ag doping content.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
N. Umamaheswa Reddy, S. Uthanna, and P. Jayarama Reddy "Electrical and optical properties of pure and silver-doped zinc telluride films", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); https://doi.org/10.1117/12.57033
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