Electrical characterization of the reactive-ion-etch-induced damages in silicon

N. Ramadas; Vayalakkara Premachandran

doi:10.1117/12.56976

1 February 1992 Electrical characterization of the reactive-ion-etch-induced damages in silicon

N. Ramadas, Vayalakkara Premachandran

Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.56976
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India

Abstract

Reactive ion etch induced damage in silicon have been studied in terms of its electrical characteristics. Samples were plasma etched in the commonly used gases SF₆, CF₄ and O₂. The extent of damage was determined by evaluating the Schottky barrier diodes fabricated on the etched silicon surfaces. The behavior of these defects was also studied. These results were further compared with damages induced by plasmas of chemically active (N₂) and chemically inactive (Ar) gases.

Citation Download Citation

N. Ramadas and Vayalakkara Premachandran "Electrical characterization of the reactive-ion-etch-induced damages in silicon", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); https://doi.org/10.1117/12.56976

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available