Electrical characterization of the reactive-ion-etch-induced damages in silicon

N. Ramadas; Vayalakkara Premachandran

doi:10.1117/12.56976

1 February 1992 Electrical characterization of the reactive-ion-etch-induced damages in silicon

N. Ramadas, Vayalakkara Premachandran

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Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.56976
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India

Abstract

Reactive ion etch induced damage in silicon have been studied in terms of its electrical characteristics. Samples were plasma etched in the commonly used gases SF₆, CF₄ and O₂. The extent of damage was determined by evaluating the Schottky barrier diodes fabricated on the etched silicon surfaces. The behavior of these defects was also studied. These results were further compared with damages induced by plasmas of chemically active (N₂) and chemically inactive (Ar) gases.

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N. Ramadas and Vayalakkara Premachandran "Electrical characterization of the reactive-ion-etch-induced damages in silicon", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); https://doi.org/10.1117/12.56976

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