1 February 1992 Electrical properties of indium antimony films
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Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.57006
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India
Abstract
The electrical properties of InxSb1-x(0 < x < 1) alloy films deposited on glass substrate in a vacuum of 10-5 torr have been studied. It is observed that films with composition around x equals 0.6 show minimum resistivity, maximum carrier mobility and more order in structure. The charge carriers appear to be holes for all compositions. The thermoelectric power of InSb films increase initially and shows maxima around x equals 0.2, beyond which a decrease is found with the increase in In content.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Surinder Kaur, Taminder Singh, R. K. Bedi, "Electrical properties of indium antimony films", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.57006; https://doi.org/10.1117/12.57006
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