1 February 1992 Electron Phonon Scattering and Phonon Conductivity in As-Doped Germanium
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Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.634085
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India
Abstract
Our recently derived expressions for the electron-phonon (e-p) interaction relaxation rates have been appleid to the explanation of phonon conductivity of As-doped Ge beyond conductivity maximum. Due to the added role of dilatation deformation potential, Ed, in e-p relaxation rates we have been able to explain the phonon conductivity of As-doped Ge at higher temperatures for the first time.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. K. Roy, K. N. Sood, "Electron Phonon Scattering and Phonon Conductivity in As-Doped Germanium", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); doi: 10.1117/12.634085; https://doi.org/10.1117/12.634085
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