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1 February 1992 Electronic conduction and density of states in Pb-modified amorphous germanium sulfide semiconductors
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Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.57024
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India
Abstract
Amorphous semiconductors in the system GexS1-x are an interesting class of materials which exhibit quite different short range order in crystalline and amorphous state and form stoichiometric compositions like GeS, GeS2 Ge2S3. Lead sulphide has been found to form stable glasses with GeS2 in the presence of GeS. The exhibit photoconductivity of ambiopolar type1 Nature of electronic transport in these semiconductors is not well understood. It is of interest to study their electronic properties ard determine density of defect states in the bard gap. In this communication we have studied the a.c. conductivity of bulk amorphous (PbS)x(Ges)0 7-x (Ges2) and Ge42S58.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. K. Malik and K. L. Bhatia "Electronic conduction and density of states in Pb-modified amorphous germanium sulfide semiconductors", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); https://doi.org/10.1117/12.57024
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